LE/EECS 3610 (4.00)

Semiconductor Physics and Devices

Description

This course is intended to teach students the basic working principles and modern challenges of semiconductor devices. The main topics will be: (i) Semiconductor physics, (ii) Diodes including p-nand metal-semiconductor junctions, (iii) Metal-oxide-semiconductor capacitors (MOSCAPs), (iv) Metaloxide-semiconductor field-effect transistors (MOSFETs) and related field-effect transistors, (v) Introduction to microfabrication illustrated by the basic MOSFET process, and (vi) State-of-the-art MOSFET scaling challenges and solutions such as high-k dielectrics, strain and FinFET in the context of the International Technology Roadmap for Semiconductors (ITRS) and its successor the International Roadmap for Devices and Systems (IRDS). The students use device simulation software to model device behavior. Prerequisites: A cumulative GPA of 4.50 or better over all major EECS courses (without second digit "5"); LE/EECS 2210 3.00 or SC/PHYS 3050 3.00.

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